Title: Extreme-Temperature (1000 °C) Operation of InGaN/AlGaN Nanowire Light-Emitting Diodes
Authors: M. B. S. Muthu, I. H. Emu, R. T. Velpula, H. P. T. Nguyen
Journal: ACS Photonics
Title: Highly Stable Phosphor-Free InGaN/AlGaN Nanowire White Light-Emitting Diodes for Extreme Environments
Authors: M. B. S. Muthu, S. Velpula, R. T. Velpula, I. H. Emu, U. Ramirez, H. P. T. Nguyen
Journal: Materials Science in Semiconductor Processing
Title: Resilient High-Temperature Operation of GaN-on-SiC HEMTs with Stable DC Characteristics up to 600 °C
Authors: T. R. Lenka, M. B. S. Muthu, I. H. Emu, T. Rahman, M. Debenedictis, H. P. T. Nguyen
Journal: Microelectronics Journal
Title: Polarization-Induced Doping in AlInN/GaN Nanowire Ultraviolet Light-Emitting Diodes
Authors: S. Das, M. B. S. Muthu, P. T. T. L. Nguyen, T. R. Lenka, F. A. Talukdar, H. P. T. Nguyen
Journal: Journal of Nanophotonics
Title: A Novel AlN/β-Ga₂O₃ High Electron Mobility Transistor with 2 kV and 600 GHz Operation
Authors: T. R. Lenka, T. Rahman, M. B. S. Muthu, I. H. Emu, H. P. T. Nguyen
Journal: Microsystem Technologies
Title: Superlattice Structure for High Performance AlGaN Deep Ultraviolet LEDs
Authors: M. B. S. Muthu, R. T. Velpula, B. Jain, H. P. T. Nguyen
Journal: Photonics
Title: Lattice Heat Flow Thermal Modeling of Recessed Bridge-Gate InAlGaN/GaN HEMT
Authors: T. Rahman, T. R. Lenka, M. B. S. Muthu, I. H. Emu, U. Ramirez, H. P. T. Nguyen
Journal: Microsystem Technologies
Title: Phosphor-Converted III-Nitride Nanowire White Light-Emitting Diodes
Authors: H. D. Nguyen, M. B. S. Muthu, H. P. T. Nguyen
Book: Nanoelectronic Devices and Applications
Title: Energy-Efficient Near-Sensor Event Detector Based on Multilevel Ga₂O₃ RRAM
Authors: M. Morsali, S. Tabrizchi, R. T. Velpula, M. B. S. Muthu, H. P. T. Nguyen, M. Imani, et al.
Conference: IEEE ISVLSI
Title: Advantages of Concave Quantum Barriers in AlGaN Deep Ultraviolet Light-Emitting Diodes
Authors: B. Jain, M. B. S. Muthu, R. T. Velpula, N. T. A. Nguyen, H. P. T. Nguyen
Proceedings: Gallium Nitride Materials and Devices XVIII
Title: Characteristics of Leakage Currents in InGaN/AlGaN Nanowire-Based Red MicroLEDs
Authors: S. Shrestha, R. T. Velpula, B. P. Pandey, M. B. S. Muthu, N. T. A. Nguyen, et al.
Journal: Applied Optics
Title: Highly Stable White Light Emission from III-Nitride Nanowire LEDs Utilizing Nanostructured Alumina-Doped Mn⁴⁺ and Mg²⁺
Authors: T. T. Doan, T. Q. Le, B. A. Tran, T. Cao-Thanh Pham, R. T. Velpula, et al.
Journal: ACS Omega
Title: Self-Cleaning Femtosecond Laser Micromachining of Grooves on Silicon: Effect of Solvent Immersion
Authors: M. Manobalasankar, A. Sahoo, S. Krishnan
Conference: IEEE WRAP
Title: Femtosecond Ablation Studies on (LuBi)₃Fe₅O₁₂ (BLIG) Epitaxial Film
Authors: M. Malathi, M. Manobalasankar, S. Anubhab, P. Anil, K. Sivarama
Conference: IEEE WRAP
Title: Microchannels on Silica Surface Using Femtosecond Laser Pulses
Authors: A. Sahoo, M. Manobalasankar, S. Krishnan
Conference: IEEE International Conference on Power, Control, Signals and Instrumentation Engineering